C1162 데이터시트 PDF ( Data sheet )

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector

E2C0034-27-Y5 ¡ Semiconductor MSC1162A ¡ Semiconductor 40-Bit Vacuum Fluorescent Display Tube Grid, Anode Driver This version: Nov. 1997 MSC1162A Previous version: Jul. 1996 GENERAL DESCRIPTION The MSC1162A is a monolithic IC designed for directly driving the grid and anode of the vacuum fluor

Elektronische Bauelemente 2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier TO-126 CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C Range 60~120 100~200 2SC1162-D

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION ·With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emit

WIDE BANDWIDTH AMPLIFIER UNIT C11184 The output signal from a photomultiplier tube can be directly input to the C11184 and it provides a voltage output signal with 50 Ω load at a conversion factor of 1.25 mV, A. It can be used as a wide bandwidth amplifier not only for a photomultiplier tube but