C2690 데이터시트 PDF ( Data sheet )

DATA SHEET SILICON POWER TRANSISTOR 2SC2690,2690A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW, HIGH FREQUENCY POWER AMPLIFICATION DESCRIPTION These products are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES Suitable for use in driver stage of 50

DATA SHEET SILICON POWER TRANSISTOR 2SC2690,2690A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW, HIGH FREQUENCY POWER AMPLIFICATION DESCRIPTION These products are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES Suitable for use in driver stage of 50

2SC2610 Silicon NPN Triple Diffused Application High voltage amplifier TV Video output Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) REJ03G0700-0200 (Previous ADE-208-1068) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Item Collector to base

2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collect

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO¡ª 92 C2611 FEATURES Power dissipation PCM : 0.75 Collector current ICM : 0.2 TRANSISTOR ¨NPN W ¨ Tamb=25¡æ A 1. BASE 2.COLLECTOR Collector-base voltage V(BR)CBO : 600 3. EMITTER 1 2 3 V