C5686 데이터시트 PDF ( Data sheet )

Power Transistors 2SC5686 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features (2.0) High breakdown voltage: VCBO ≥ 2 000 V High-speed switching: tf < 200 ns Wide safe operation

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES High-gain transistor for buffer amplifier : S21e 2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GH- fT = 25 GH- “UHS0” (Ultra High Speed Process)

Transistors 2SC5609 Silicon PNP epitaxial planer type For general amplification Complementary to 2SA2021 I Features High foward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum

Ordering number:ENN6367 PNP, NPN Epitaxial Planar Silicon Transistors 2SA2022, 2SC5610 DC, DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation vol