C5906 데이터시트 PDF ( Data sheet )

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: t

Silicon NPN transistor epitaxial type C5906 C5906 [ Applications ] High voltage, High current [ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC, IB= 2A, 200mA Fast-switching speed [ Absolute maximum ratings (T

Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features High breakdown voltage: VCBO ≥ 1 700 V Wide safe operation area Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚

Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) ■ Features High breakdown voltage (VCBO ≥ 1 700 V) High-speed switching (tf < 200 nsec) Wide safe operation area 26.5±0.5

Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features High breakdown voltage: VCBO ≥ 1 700 V High-speed switching: tf < 200 ns Wide safe operation area 26.