CGY2014 데이터시트 PDF ( Data sheet )

INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM, DCS, PCS power amplifier Preliminary speci cation File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary speci cation GSM, DCS, PCS power ampli er FEATURES Operates at 3.6 V battery supply voltage Power Amplifier (PA)

INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM, DCS, PCS power amplifier Preliminary speci cation File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary speci cation GSM, DCS, PCS power ampli er FEATURES Operates at 3.6 V battery supply voltage Power Amplifier (PA)

CGY 0819 GaAs MMIC l l l l l l Tri mode power amplifier for AMPS, CDMA , TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control Input matched to 50 ohms, simple o

CGY 0918 GaAs MMIC l l l l Dual band GSM, PCN power amplifier 35dBm , 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 0918 CGY 0918

CGY1032 1 GHz, 32 dB gain GaAs push-pull amplifier Rev. 1 10 February 2011 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET)