CGY887B 데이터시트 PDF ( Data sheet )

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product speci cation 2001 Nov 27 Philips Semiconductors Product speci cation 860 MHz, 27.8 dB gain push-pull ampli er FEATURES Excellent linearity High gain Extremely low noise Ex

CGY 0819 GaAs MMIC l l l l l l Tri mode power amplifier for AMPS, CDMA , TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control Input matched to 50 ohms, simple o

CGY 0918 GaAs MMIC l l l l Dual band GSM, PCN power amplifier 35dBm , 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 0918 CGY 0918

CGY1032 1 GHz, 32 dB gain GaAs push-pull amplifier Rev. 1 10 February 2011 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET)