CJ3400A 데이터시트 PDF ( Data sheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V RDS(on)MAX 32mΩ@10V 38mΩ@4.5V 45mΩ@2.5V ID 5.8A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION - High dense cell design

CJ3400A SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor FEATURE - High dense cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability MARKING: R0A SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃

CJ303NL SOT-89-3L Plastic-Encapsulate Transistors CJ303NL TRANSISTOR (NPN) FEATURES - High DC Current Gain - Ultra Low Collector-Emitter Saturation Voltage MARKING: 303NL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Volta

CJ303PL SOT-89-3L Plastic-Encapsulate Transistors CJ303PL TRANSISTOR (PNP) SOT-89-3L FEATURES - Small Flat Package - High DC Current Gain - Ultra Low Collector-Emitter Saturation Voltage 1. BASE 2. COLLECTOR 3. EMITTER MARKING:303PL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCB

CJ3134K SOT-723 Plastic-Encapsulate MOSFETS CJ3134K N-Channel MOSFET SOT-723 FEATURES - Lead Free Product is Acquired - Surface Mount Package - N-Channel Switch with Low RDS(on) - Operated at Low Logic Level Gate Drive APPLICATION - Load, Power Switching - Interfacing Switching - Battery Managem