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Datasheet CMKT5078 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CMKT5078ULTRAmini. SURFACE MOUNT SILICON TRANSISTORS

CMKT5078 CMKT5087 CMKT5088 ULTRAmini SURFACE MOUNT SILICON TRANSISTORS ™ Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMKT5078 , CMKT5087, and CMKT5088, are Silicon transistors in an ULTRAmini™ surface mount package, designed for applications requiring high gain and
Central Semiconductor Corp
Central Semiconductor Corp
transistor


CMK Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1CMKD6000ULTRA LOW LEAKAGE SILICON SWITCHING DIODES

CMKD6000 SURFACE MOUNT DUAL PAIR, IN SERIES ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6000 consists of two pair of electrically isolated, series configured Ultra Low Leakage Switching Diodes manufactured by the epitaxi
Central Semiconductor
Central Semiconductor
diode
2CMKD6001ULTRA LOW LEAKAGE SILICON SWITCHING DIODES

CMKD6001 SURFACE MOUNT ULTRAmini™ TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three (3) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a ULTRA
Central Semiconductor
Central Semiconductor
diode
3CMKD6263ULTRAmini. TRIPLE ISOLATED HIGH VOLTAGE SCHOTTKY DIODE

CMKD6263 ULTRAmini™ TRIPLE ISOLATED HIGH VOLTAGE SCHOTTKY DIODE Central FEATURES: TM Semiconductor Corp. • MEETS GALVANIC ISOLATION REQUIREMENTS OF IEEE 1394 • HIGH VOLTAGE (70V) • ULTRAmini™ PACKAGE • REQUIRES LESS BOARD SPACE THAN 3 INDIVIDUAL DIODES • LOW FORWARD VOLTAGE SOT-36
Central Semiconductor Corp
Central Semiconductor Corp
diode
4CMKD6263DOULTRAmini. DUAL OPPOSING HIGH VOLTAGE SCHOTTKY DIODES

CMKD6263DO ULTRAmini DUAL OPPOSING HIGH VOLTAGE SCHOTTKY DIODES ™ Central FEATURES: TM Semiconductor Corp. • • • • SOT-363 CASE DUAL OPPOSING (DO) SCHOTTKY DIODES HIGH VOLTAGE (70V) LOW FORWARD VOLTAGE GALVANICALLY ISOLATED DESCRIPTION: The Central Semiconductor CMKD6263DO incorporat
Central Semiconductor Corp
Central Semiconductor Corp
diode
5CMKDM8005SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

CMKDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs o
Central Semiconductor
Central Semiconductor
mosfet
6CMKSH-3DOULTRAmini. DUAL OPPOSING SCHOTTKY DIODES

CMKSH-3DO ULTRAmini™ DUAL OPPOSING SCHOTTKY DIODES Central FEATURES: TM Semiconductor Corp. • • • • SOT-363 CASE DUAL OPPOSING (DO) SCHOTTKY DIODES SPACE SAVINGS ULTRAmini™ FAMILY GALVANICALLY ISOLATED LOW FORWARD VOLTAGE (0.58V TYP @ 100mA) DESCRIPTION: The Central Semiconductor C
Central Semiconductor Corp
Central Semiconductor Corp
diode
7CMKT2207ULTRAmini. SURFACE MOUNT COMPLEMENTARY TRANSISTORS

CMKT2207 ULTRAmini™ SURFACE MOUNT COMPLEMENTARY TRANSISTORS Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMKT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount package, designe
Central Semiconductor Corp
Central Semiconductor Corp
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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