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Datasheet CMS15 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CMS15 | Switching Mode Power Supply Applications CMS15
TOSHIBA Schottky Barrier Diode
CMS15
Switching Mode Power Supply Applications (Output voltage: ≤12 V) DC/DC Converter Applications
• • • • Forward voltage: VFM = 0.58 V (max) Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 60 V Suitable for compact a | Toshiba Semiconductor | data |
2 | CMS15I40A | Schottky Barrier Diode Schottky Barrier Diode
CMS15I40A
1. Applications
• Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.49 V (max) @IFM = 1.5 A (2) Average forward current: IF(AV) = 1.5 A (3) Repetitive peak reverse voltage: | Toshiba | diode |
CMS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CMS-S032-020 | SCHOTTKY BARRIER DIODE
CMS-S032-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B)) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me Champion Microelectronic diode | | |
2 | CMS-S032-040 | SCHOTTKY BARRIER DIODE
CMS-S032-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
3 | CMS-S035-020 | SCHOTTKY BARRIER DIODE
CMS-S035-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
4 | CMS-S035-040 | SCHOTTKY BARRIER DIODE
CMS-S035-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
5 | CMS-S040-020 | SCHOTTKY BARRIER DIODE
CMS-S040-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
6 | CMS-S040-040 | SCHOTTKY BARRIER DIODE CMS-S040-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Champion diode | | |
7 | CMS-S040-040L | SCHOTTKY BARRIER DIODE
CMS-S040-040L
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me Champion Microelectronic diode | |
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Número de pieza | Descripción | Fabricantes | |
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