CMSH3-100M 데이터시트 PDF ( Data sheet )

W NE CMSH3-20M CMSH3-40M CMSH3-60M CMSH3-100M Central FEATURES: TM Semiconductor Corp. HIGH DENSITY SCHOTTKY BARRIER RECTIFIER 3.0 AMP, 20 THRU 100 VOLTS SMB CASE DESCRIPTION: HIGH CURRENT CAPABILITY FLAMMABILITY CLASSIFICATION UL94V-0 HIGH DENSITY, SUPER MINI DEVICE SUPERIOR LOT TO LOT C

CMSH3-20MA CMSH3-60MA CMSH3-40MA CMSH3-100MA SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 3.0 AMP, 20 THRU 100 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH3-20MA series 3.0 Amp surface mount silicon Schottky rectifier is a well constructed, highly reliable comp

CMSH3-100MFL CMSH3-150MFL CMSH3-200MFL SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 3.0 AMP, 100 THRU 200 VOLT SMAFL CASE APPLICATIONS: Reverse polarity protection Voltage clamping DC-DC output rectification Power management w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCT

CMS-S032-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.814 * 0.814 mm 2 Bond Pad size(B)) : 0.686 * 0.686 mm 2 A Thickness : 300 m ± 20 m Metalization : Anode Ti, Ni, Ag B Metalization : Catho

CMS-S032-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.814 * 0.814 mm 2 Bond Pad size(B) : 0.686 * 0.686 mm 2 A Thickness : 300 m ± 20 m Metalization : Anode Ti, Ni, Ag B Metalization : Cathod

CMS-S035-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.889 * 0.889 mm 2 Bond Pad size(B) : 0.762 * 0.762 mm 2 A Thickness : 300 m ± 20 m Metalization : Anode Ti, Ni, Ag B Metalization : Cathod