CY14B104N 데이터시트 PDF ( Data sheet )

PRELIMINARY CY14B104L, CY14B104N 4-Mbit (512K x 8, 256K x 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Functional Description The Cypress CY14B104L, CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K words of 8

CY14B104LA, CY14B104NA 4-Mbit (512 K × 8, 256 K × 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 20 ns, 25 ns, and 45 ns access times Internally organized as 512 K × 8 (CY14B104LA) or 256 K × 16 (CY14B104NA) Hands off automatic STORE on power-down with only a small capacitor S

preliminary CY100 Companion IC with 5 V ADC Eight channel 10 bit A , D converter with 5 V interface for 3.3 V or 2.5 V controllers for automotive, truck and 42 V applications FEATURES Eight channel 10 bit A , D converter Approved ISO interface , slew rate limitation, bidirectional serial

Low Profile HC49S Leaded Crystal Frequency Range: Calibration Tolerance: (Option) Frequency Stability: (Option) Temperature Range: (Option) (Option) Storage: Shunt Capacitance: Drive Level: ESR: CYSxx Model ree dF S a Le oH ant R pli m Co Quart- Crystal 3.180MH- to 40MH- (fund) 27MH- to 86MH- (

Surface Mount HC49S SMD Crystal Frequency Range: Calibration Tolerance: (Option) Frequency Stability: (Option) Temperature Range: (Option) (Option) Storage: Shunt Capacitance: Drive Level: ESR: CYSDxx Model ree dF S a Le oH ant R pli m Co Quart- Crystal 3.18MH- to 40MH- (fund) 27MH- to 86MH- (3