D1207 데이터시트 PDF ( Data sheet )

TetraFET D1204UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss 5 4 H I F M K J N DT PIN 1 PI

Ordering number:930C PNP, NPN Epitaxial Planar Silicon Darlington Transistors 2SB892, 2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. Package Dimensions unit:mm 2006A [2SB892, 2SD1207] Features · FBET and MBIT process

TetraFET D1207UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D G E 5 4 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W 12.5V 1GH- PUSH PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN J K I N M O SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS

SEMICONDUCTOR RRooHHSS SEMICONDUCTOR Fig.1 Maximuam forward voltage drop characteristics D12000W Series RRooHHSS Fig.2 Surge forward current vs pulse length Fig.3 Forward power loss vs. Average forward current sine waveform Fig.4 Forward power loss vs. Average forward current,square waveform F

TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL P

TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL P