D12V0M1U2S9 데이터시트 PDF ( Data sheet )

NEW PNREOWDUPCRTODUCT D12V0M1U2S9 12V UNIDIRECTIONAL TVS DIODE Product Summary VBR min 13V Ipp max 4A Cin typ 20pF Description This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes it i

SEMICONDUCTOR RRooHHSS SEMICONDUCTOR Fig.1 Maximuam forward voltage drop characteristics D12000W Series RRooHHSS Fig.2 Surge forward current vs pulse length Fig.3 Forward power loss vs. Average forward current sine waveform Fig.4 Forward power loss vs. Average forward current,square waveform F

TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL P

TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL P