D209L 데이터시트 PDF ( Data sheet )

NPN 型高 功率 晶 管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L 主要 MAIN CHARACTERISTICS IC VCEO PC 12A 400V 120W 封 Package 用途 - 能 - 子 流器 - 高 源 - 高 功率 - 一般功率放大 路 APPLICATIONS - Energy-saving light - Electronic ballasts - Hig

tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One.. Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters Gen

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·G

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: Support for the chip Electrical contacts Suitable embedding interface for

D200 Series Single & Dual Output Miniature, 2W SIP DC, DC Converters Electrical Speci cations Speci cations typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Speci cations subject to change without notice. Input Key Features: Parameter Conditions Min. Ty

TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W 28V 1GH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS