DE2S068 데이터시트 PDF ( Data sheet )

This product complies with the RoHS Directive (EU 2002, 95, EC). DE2S068 Silicon epitaxial planar type For ESD protection Features High electrostatic discharge ESD Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Package Code SSMini2-F

!Note This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering. This P

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv, dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv, dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc

DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv, dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv, dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 2.0W, °C above 25°C Tc = 25°C VDSS