FGL60N100D 데이터시트 PDF ( Data sheet )

FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features H

FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT November 2013 Features Field Stop Trench Technology High Speed Switching Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A High Input Impedance Applications Solar Inverter, UPS, Welder, PFC

FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT July 2007 IGBT® Features High speed switching Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. Description Employing NPT t

FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features High speed switching Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A High input impedance CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls and general p