FPD6836P70 데이터시트 PDF ( Data sheet )

FPD6836P70 Low Noise High Frequency Packaged pHEMT GENERAL DESCRIPTION Package P70 The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor

FPD6836P70 Low-Noise High-Frequency Packaged pHEMT FPD6836P70 LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, hig

FPD6836P70 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: PACKAGE: 22 dBm Output Power (P1dB) 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz Useable Gain to 18 GHz Datasheet v3.0 GENERAL DESCR

PRELIMINARY PERFORMANCE (1.8 GHz) 40 dBm Output Power (P1dB) 11 dB Power Gain (G1dB) -44 dBc WCDMA ACPR at 30 dBm output power 180 to 300 mA typical quiescent current (IDQ) 55% Power-Added Efficiency Evaluation Boards Available Additional Design Data Available on Website Usable Gain to 3.8G

PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS PERFORMANCE (3.5 GHz) (802.16-2004 WiMAX Modulation) 30 dBm Output Power, < 2.5% EVM 9.5 dB Power Gain Class AB Efficiency 10% (10V , 1A IDQ) GATE DRAIN Class B Efficiency 18% (8V , 300 mA IDQ) BOND PAD BOND PAD 39 dBm CW O