G3407 데이터시트 PDF ( Data sheet )

Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007, 01, 15 REVISED DATE : BVDSS RDS(ON) ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for

Pb Free Plating Product ISSUED DATE :2006, 08, 14 REVISED DATE : G3400 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 28m 5.8A The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3400 is universally

Pb Free Plating Product CORPORATION G3401 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2006, 08, 31 REVISED DATE : BVDSS RDS(ON) ID -30V 50m -4.2A Description The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness devic

Global Mixed-mode Technology G3402 4-Bit Bidirectional Voltage Level Translator for Open Drain and Push-Pull Applications Features 4-Bit Bidirectional Translator for Open Drain and Push-Pull Bus Applications I2C and SMBus Compatible Less than 1.5ns Maximum Propagation Delay to Accommodate Sta