G4BC20UD 데이터시트 PDF ( Data sheet )

PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

G4A THRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 600 Volts * Case Style G4 Forward Current - 3.0 Amperes FEATURES High temperature metallurgically bonded construction Glass passivated cavity-free junction Hermetically sealed package 3.0 Ampere operation at TA=75°C with

PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard T

PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than