G4PC50F 데이터시트 PDF ( Data sheet )

PD 91468C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50F Fast Speed IGBT Features Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry st

PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Speed IGBT Fast: Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 In

PD -91587A IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10 s, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution

PD - 91586A INSULATED GATE BIPOLAR TRANSISTOR IRG4PC30S Standard Speed IGBT Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry stan