GI812 데이터시트 PDF ( Data sheet )

GI810 THRU GI818 GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts * D DO-204AC 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. Forward Current - 1.0 Ampere FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature m

GI810 thru GI818 Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES Superectifier structure for high reliability condition SUPERECTIFIER ® Cavity-free glass-passivated junction Fast switching for high efficiency Low leakage current High forward surge

ISSUED DATE :2005, 05, 06 REVISED DATE : GI8050 Description Features NPN EPITAXIAL TRANSISTOR The GI8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GI8550 Package Dimensions TO-251 REF. A B

Pb Free Plating Product ISSUED DATE :2006, 02, 15 REVISED DATE : GI80LS02 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The through-hol

Pb Free Plating Product ISSUED DATE :2005, 11, 22 REVISED DATE : GI80N03 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8m 80A The GI80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effective