GI9T18 데이터시트 PDF ( Data sheet )

Pb Free Plating Product ISSUED DATE :2005, 04, 06 REVISED DATE : GI9T 18 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 14m 38A The GI9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effective

Pb Free Plating Product ISSUED DATE :2005, 02, 22 REVISED DATE :2005, 12, 01B GI90T 03 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 5m 75A The GI90T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

GI910 THRU GI917 MEDIUM-SWITCHING PLASTIC RECTIFIER Reverse Voltage - 50 to 800 Volts DO-201AD Forward Current - 3.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High surge current capability Construction utilizes void-free molded plastic techniq

GI910 thru GI917 Vishay General Semiconductor Medium Switching Plastic Rectifier FEATURES Fast switching for high efficiency Low forward voltage drop Low leakage current High forward surge capability Solder dip 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS directive 2002, 95, EC and