GSB772S 데이터시트 PDF ( Data sheet )

CORPORATION GSB772S Description Package Dimensions D E S1 ISSUED DATE :2004, 09, 13 REVISED DATE :2004, 11, 29B P N P E P I TA X I A L P L A N A R T R A N S I S TO R The GSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. TO-92 A S

ISSUED DATE :2005, 11, 07 REVISED DATE : GSB772SS Description P N P E P I TA X I A L P L A N A R T R A N S I S T O R The GSB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. Features High current output up to -3A Low satu

G S B 11 3 2 The GSB1132 is a epitaxial 1, 3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R Description planar type PNP silicon transistor . (IC, IB = -500mA , -50 mA) Features Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50

ISSUED DATE :2006, 01, 18 REVISED DATE : GSB1694 Description Package Dimensions PNP EPITAXIAL T RANSISTOR The GSB1694 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 M

ISSUED DATE :2003, 10, 24 REVISED DATE :2004, 11, 29B GSB649A Description Features Package Dimensions D P N P E P I TA X I A L P L A N A R T R A N S I S T O R The GSB649A is designed for frequency power amplifier. *Low frequency power amplifier Complementary pair with GSD669A E S1 TO-92 A b1