GSBAT54C 데이터시트 PDF ( Data sheet )

ISSUED DATE :2005, 01, 05 REVISED DATE : G S B AT 5 4 , A , C , S S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 2 0 0 m A Description These schottky barrier diodes are designed for high speed switching applications circuit protection, and v

G S B 11 3 2 The GSB1132 is a epitaxial 1, 3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R Description planar type PNP silicon transistor . (IC, IB = -500mA , -50 mA) Features Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50

ISSUED DATE :2006, 01, 18 REVISED DATE : GSB1694 Description Package Dimensions PNP EPITAXIAL T RANSISTOR The GSB1694 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 M

ISSUED DATE :2003, 10, 24 REVISED DATE :2004, 11, 29B GSB649A Description Features Package Dimensions D P N P E P I TA X I A L P L A N A R T R A N S I S T O R The GSB649A is designed for frequency power amplifier. *Low frequency power amplifier Complementary pair with GSD669A E S1 TO-92 A b1