HF115F-A 데이터시트 PDF ( Data sheet )

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HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: PG = 20 dB min. at 10 W, 30 MH- IMD3 = -30 dBc max. at 10 W (PEP) Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RAT

HF10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: PG = 20 dB min. at 10 W, 30 MH- IMD3 = -30 dBc max. at 10 W (PEP) Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO

HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-12 is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R Ø.125 NOM. L FEATURES: PG = 12 dB min. at 100 W, 30 MH- IMD3 = -30 dBc max. at 100 W (PEP) Omnigold™ Metalization System C B E H D G F K MAXIMUM RATINGS IC