HF220-50 데이터시트 PDF ( Data sheet )

HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: PG = 14 dB Typical at 220 W, 30 MH- IMD3 = -32 dBc Typ. at 220 W (PEP) Omnigold™ M

HF220-50F NPN RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-50F is a Common Emitter Device Designed for SSB Transmitter Applications in the 2 to 30 MH- Band. FEATURES INCLUDE: PG = 13 dB min. @ 30 MH- Gold Metallization Emitter Ballasting PACKAGE STYLE .500 4L FLG MAXIMUM RATINGS IC VCBO PD

HF20-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF20-12F is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MH- Band. FEATURES INCLUDE: Replacement for MRF433 & SD1285 PG = 18 dB Typical at 30MH- & 20W Withstands 20:1 Load VSWR MAXIMUM RATINGS IC VCB V

HF20-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF20-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: PG = 18 dB min. at 20 W, 30 MH- IMD3 = -30 dBc max. at 20 W (PEP) Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO

Preliminary Data Sheet PD-20600 rev. C 2, 04 HF20A060ACE Hexfred Die in Wafer Form 600 V Size 20 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min, Max) 1.7V Max. 600V Min. 10