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HGT1S3N60C3D 데이터시트 PDF ( Data sheet )이 부품은 UFS Series N-Channel IGBT의 기능을 가지고 있습니다. |
HGT1S3N60C3D의 핀아웃 및 회로도를 보려면 검색 결과에 있는 PDF 아이콘을 클릭하세요. |
번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 |
1 | HGT1S3N60C3D Fairchild Semiconductor | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
6A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall T | ![]() |
2 | HGT1S3N60C3D Harris Corporation | UFS Series N-Channel IGBT S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
6A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall | ![]() |
3 | HGT1S3N60C3DS Fairchild Semiconductor | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
6A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall T | ![]() |
4 | HGT1S3N60C3DS Intersil Corporation | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTP3N60C3D, HGT1S3N60C3DS
Data Sheet January 2000 File Number 4140.2
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices | ![]() |
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디바이스마트 IC114 엘레파츠 ICbanQ |
부품번호 | 상세설명 | 제조업체 | |
HGT1N30N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and th |
![]() Fairchild Semiconductor |
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부품번호 | 상세설명 | 제조업체 | |
HGT1N40N60A4 | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the |
![]() Fairchild Semiconductor |
![]() |
부품번호 | 상세설명 | 제조업체 | |
HGT1N40N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the |
![]() Fairchild Semiconductor |
![]() |
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