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HGTG20N60A4D 데이터시트 PDF ( Data sheet )이 부품은 SMPS Series N-Channel IGBT의 기능을 가지고 있습니다. |
HGTG20N60A4D의 핀아웃 및 회로도를 보려면 검색 결과에 있는 PDF 아이콘을 클릭하세요. |
번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 |
1 | HGTG20N60A4D Fairchild Semiconductor | SMPS Series N-Channel IGBT Data Sheet
HGTG20N60A4D
February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low o | ![]() |
2 | HGTG20N60A4D Intersil Corporation | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG20N60A4D
Data Sheet October 1999 File Number 4790
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFE | ![]() |
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국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
부품번호 | 상세설명 | 제조업체 | |
HGT1N30N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and th |
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부품번호 | 상세설명 | 제조업체 | |
HGT1N40N60A4 | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the |
![]() Fairchild Semiconductor |
![]() |
부품번호 | 상세설명 | 제조업체 | |
HGT1N40N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the |
![]() Fairchild Semiconductor |
![]() |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2 |