HM-6516 데이터시트 PDF ( Data sheet )

HM-6516 March 1997 2K x 8 CMOS RAM Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the activ

TM HM-6516, 883 March 1997 2K x 8 CMOS RAM Features Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Low Power Standby. . . . . . . . . . . . . . . . . . . 275 W Max Low Power Operation . . . . . . . . . . . .

HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pi

MICRO HI-FI COMPONENT SYSTEM HM-331 INSTRUCTION MANUAL KENWOOD CORPORATION COMPACT DIGITAL AUDIO TEXT B60-4228-00 00 CH (M,T) OC 9809 2 Before applying power Units are designed for operation as follows. Caution : Read this page carefully to ensure safe operation. HM-331 (En, T) Eu

HM-6504, 883 March 1997 4096 x 1 CMOS RAM Description The HM-6504, 883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses, data

HM-6504, 883 March 1997 4096 x 1 CMOS RAM Description The HM-6504, 883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses, data