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IDT23S09-1HDC 데이터시트 PDF ( Data sheet )이 부품은 IDT23S09 3.3V ZERO DELAY CLOCK BUFFER / SPREAD SPECTRUM COMPATIBLE의 기능을 가지고 있습니다. |
IDT23S09-1HDC의 핀아웃 및 회로도를 보려면 검색 결과에 있는 PDF 아이콘을 클릭하세요. |
번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 |
1 | IDT23S09-1HDC Integrated Device | IDT23S09 3.3V ZERO DELAY CLOCK BUFFER / SPREAD SPECTRUM COMPATIBLE IDT23S09 3.3V ZERO DELAY CLOCK BUFFER
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
3.3V ZERO DELAY CLOCK BUFFER, SPREAD SPECTRUM COMPATIBLE
FEATURES: DESCRIPTION:
IDT23S09
Phase-Lock Loop Clock Distribution 10MH- to 133MH- operating frequency Distributes one clock input to one bank of five an | ![]() |
2 | IDT23S09-1HDCI Integrated Device | IDT23S09 3.3V ZERO DELAY CLOCK BUFFER / SPREAD SPECTRUM COMPATIBLE IDT23S09 3.3V ZERO DELAY CLOCK BUFFER
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
3.3V ZERO DELAY CLOCK BUFFER, SPREAD SPECTRUM COMPATIBLE
FEATURES: DESCRIPTION:
IDT23S09
Phase-Lock Loop Clock Distribution 10MH- to 133MH- operating frequency Distributes one clock input to one bank of five an | ![]() |
데이터시트 다운로드![]()
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국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
부품번호 | 상세설명 | 제조업체 | |
IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo |
![]() Infineon Technologies |
![]() |
부품번호 | 상세설명 | 제조업체 | |
IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo |
![]() Infineon Technologies |
![]() |
부품번호 | 상세설명 | 제조업체 | |
IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro |
![]() Infineon Technologies AG |
![]() |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2 |