IRF3205 데이터시트 PDF ( Data sheet )

IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switch

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF3205 FEATURES ·Drain Current ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) Description Advanced HEXFET ® Power MOSFETs from Internation

SEMICONDUCTOR TECHNICAL DATA N-Channel Power MOSFET (55V, 120A) Purpose Suited for low voltage applications such as automotive, DC, DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching.

IRF3205 Rev.F Mar.-2016 DATA SHEET 描述 , Descriptions TO-220 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 , Features 阻抗低， 速度快。 Low On-Resistance, fast switching. 用途 , Applications 用于高效 DC, DC 和功率 。 These dev

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp