IRF350 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF350 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high spee

IRF350 Data Sheet March 1999 File Number 1826.3 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power eld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for hi

PD - 90339F REPETITIVE A V ALANCHE AND dv, dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA, AE) Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500, 543] 400V, N-CHANNEL The HEXFET technology is the key to International Rect

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp