IRF634NL 데이터시트 PDF ( Data sheet )

PD - 94310 Advanced Process Technology Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing tec

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single 0.435 I2PAK (TO-262) TO-220 D S D G S D GG D2PAK (TO-263) S N-Channel MOS

PD - 95342 Advanced Process Technology Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pr

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp