IRF730 데이터시트 PDF ( Data sheet )

MOSFET IRF730 N-channel mosfet transistor INCHANGE Features With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source D=5.5A Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 400 V VGS Gate

Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF730 RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS 400V RDS(ON) 1Ω G ID 5.5A S Description APEC MOSFET provide the power designer with the best

SEMICONDUCTOR IRF730 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5.5A, 400Volts) DESCRIPTION The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the br

IRF730 Rev.F Mar.-2016 DATA SHEET 描述 , Descriptions TO-220 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 , Features 低 荷,低反 容, 速度快。 Low gate charge, low crss, fast switching. 用途 , Applications 用于高效 DC, DC 和功率

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp