IRF7304 데이터시트 PDF ( Data sheet )

Previous Datasheet Index Next Data Sheet PD - 9.1240B PRELIMINARY IRF7304 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Fast Switching Description Fifth Generation HEXFETs from Interna

IRF7304PbF HEXFET® Power MOSFET l l l l l l l l PD - 95038 Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Fast Switching Lead-Free S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.090Ω 6 5 Top

PD - 96104A IRF7304QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free S1 G1 S2 G2 Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processin

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp