IRF9230 데이터시트 PDF ( Data sheet )

IRF9230 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES HERMETICALLY SEALED TO 3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.5

Semiconductor IRF9230, IRF9231, IRF9232, IRF9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Description These devices are P-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withst

PD-90548D IRF9230 REPETITIVE AVALANCHE AND dv, dt RATED HEXFET®TRANSISTORS JANTX2N6806 JANTXV2N6806 THRU-HOLE -TO-204AE (TO-3) REF:MIL-PRF-19500, 562 200V, P-CHANNNEL Product Summary Part Number BVDSS IRF9230 -200V RDS(on) 0.80 Ω ID -6.5A The HEXFET®technology is the key to Internation

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp