IRFP264 데이터시트 PDF ( Data sheet )

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Standard Power MOSFET IRFP 264 VDSS = 250 V ID (cont) = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv, dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC =

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single D FEATURES 250 0.075 Dynamic dV, dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Para

PD - 94214 IRFP264N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(on) = 60mΩ G S ID = 44A Description Fifth Generation

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp