IRFP450A 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP450A FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode

  
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PD -91884 SMPS MOSFET IRFP450A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv, dt Ruggedness l Fully Charac

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 64 16 26 Single D FEATURES 500 0.40 Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV, dt Ruggedness Ful

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp