IRFP9140 데이터시트 PDF ( Data sheet )

IRFP9140 Data Sheet July 1999 File Number 2292.4 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power

Power MOSFET IRFP9140, SiHFP9140 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) - 100 VGS = - 10 V 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single 0.20 S TO-247AC G S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV,

PD - 9.1492A PRELIMINARY l l l l l l IRFP9140N HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.117Ω G S ID = -23A Description Fifth Generation HEXFETs from Internat

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp