IRFR9210 데이터시트 PDF ( Data sheet )

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 8.9 2.1 3.9 Single S 3.0 DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES D

PD - 9.1507A PRELIMINARY l l l l l l l IRFR, U9120N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.6A Description Fifth Ge

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale Flame-retardant coating and color band identification. U

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES Axial lead type, small lightweight design Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp