K40T120 데이터시트 PDF ( Data sheet )

FDP52N20 , FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 , FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A Low gate charge ( Typ. 49nC) Low Crss ( Typ. 66pF) Fast switching 100% avalanche tested Improve dv, dt capability

TrenchStop 2 Generation Series ® nd IKW40N120T2 Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time 10 s Designed for : - Frequency Converters - Uninterrupted Pow

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π MOS VI) 2SK4003 Chopper Regulator, DC, DC Converter and Motor Drive Applications ６．５±０．２ Unit: mm １．５±０．２ - Low drain source ON-resistance - Low leakage current - Enhancement mode : RDS (ON) = 1.7 Ω

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of