K4A60DB 데이터시트 PDF ( Data sheet )

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600V) Enhanceme

Rev. 1.1, Feb. 2014 K4A4G045WD K4A4G085WD 4Gb D-die DDR4 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for refer

Rev. 1.1, Feb. 2014 K4A4G045WD K4A4G085WD 4Gb D-die DDR4 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for refer

Rev. 0.5, Feb. 2014 K4A4G165WD Preliminary 4Gb D-die DDR4 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V CAUTION : This document includes some items still under discussion in JEDEC. Therefore, those may be changed without pre-notice based on JEDEC progress. In additio