K7A403600M 데이터시트 PDF ( Data sheet )

K7A403600M Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Initial draft Change 7.5 bin to 7.2 Change speed symbol 6.0, 6.7, 7.2, 8.5 to 60, 67, 72, 85 Draft Date May . 15. 1997 January . 13 . 1998 February. 02.

K6X8016T3B Family Document Title 512Kx16 bit Low Power Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Deleted 44-TSOP2-400R package type. Finalized - Changed ICC1 from 4mA to 3mA - Changed ICC2 from 45mA to 30mA - Changed ISB1(industrial) from

K7B163625A K7B161825A Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature . 2. Add 165FBGA package 1. Final spec release 1. Delete

K7A163630B K7A161830B 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS