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Datasheet K7I321882M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K7I321882M | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM K7D803671B K7D801871B
Document Title
8M DDR SYNCHRONOUS SRAM
256Kx36 & 512Kx18 SRAM
Revision History
Rev No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History -Initial document. -ZQ tolerance changed from 10% to 15% -Stop Clock Standby Current condition changed from VIN=VDD-0.2V or 0.2V fixed to V IN =VIH or V I |  Samsung semiconductor | ram |
K7I Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K7I161882B | (K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM K7I163682B K7I161882B
Document Title
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Add the speed bin (-33, -30) 2. Delete the speed bin (-25, -13) 1. Change the Boundary scan exit order. 2. Correct the Samsung semiconductor ram | | |
| 2 | K7I161884B | 512Kx36 & 1Mx18 DDRII CIO b4 SRAM K7I163684B K7I161884B
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
18Mb DDRII SRAM Specification
165FBGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTI Samsung semiconductor ram | | |
| 3 | K7I163682B | (K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM K7I163682B K7I161882B
Document Title
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Add the speed bin (-33, -30) 2. Delete the speed bin (-25, -13) 1. Change the Boundary scan exit order. 2. Correct the Samsung semiconductor ram | | |
| 4 | K7I163684B | 512Kx36 & 1Mx18 DDRII CIO b4 SRAM K7I163684B K7I161884B
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
18Mb DDRII SRAM Specification
165FBGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTI Samsung semiconductor ram | | |
| 5 | K7I321882M | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM K7D803671B K7D801871B
Document Title
8M DDR SYNCHRONOUS SRAM
256Kx36 & 512Kx18 SRAM
Revision History
Rev No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History -Initial document. -ZQ tolerance changed from 10% to 15% -Stop Clock Standby Current condition changed from VIN=VDD-0.2V or 0.2V fixed to V IN =VIH or V I Samsung semiconductor ram | | |
| 6 | K7I323682M | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM K7I323682M K7I321882M
Document Title
1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V. 3. Update JTAG test conditions. 4. Reserved p Samsung semiconductor ram | | |
| 7 | K7I641882M | (K7I643682M / K7I641882M) 72Mb M-die DDRII SRAM Specification 165 FBGA K7I643682M K7I641882M
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
72Mb M-die DDRII SRAM Specification
165 FBGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SH Samsung semiconductor ram | |
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