KEL55L 데이터시트 PDF ( Data sheet )

Infrared Emitting Diodes(GaAs) DIMENSIONS FEATURES APPLICATIONS MAXIMUM RATINGS ELECTRO-OPTICAL CHARACTERISTICS - 1- Infrared Emitting Diodes(GaAs) Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensi

KEL-209A 1. Description KODENSHI KOREA CORP The KEL-209A is a high-power GaAlAs IRED mounted in a TO-18 metal stem with clear epoxy encapsulation, providing wide beam angle. 2. Features ¡ß High Output Power ¡ß Wide Beam Angle ±90deg ¡ß Epoxy Potting Type 3. Applications ¡ß Optical Switc

Infrared Emitting Diodes(GaAs) KEL-3001A DIMENSIONS The KEL-3001A is GaAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise , fall time. This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radient efficiency o

Infrared Emitting Diode(GaAs) KEL1001L The KEL1001L, high-power GaAs IRED mounted in a clear side-looking package, is compact, narrow radiant angle, and easy to mount. Dimensions [Unit : mm] Features High power with narrow radiant angle Side-looking with plastic package RoHS Compliant Applicati