KMA3D0N20SA 데이터시트 PDF ( Data sheet )

SEMICONDUCTOR TECHNICAL DATA General Description KMA3D0N20SA N-Ch Trench MOSFET This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. L E B L

5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850, 401-823-5200 Fax 401-823-8723 Email [email protected] Internet http:, , www.advintcorp.com . U 2mm (.079”) Pitch Board 4 to Board Interconnections t e e h S a t a D . w w w Features: Supplied in high temperature Peel

SEMICONDUCTOR TECHNICAL DATA General Description KMA010P20Q P-Ch Trench MOSFET It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES VDSS=-20V, ID=-10A. Drain-Source ON Resistance. : RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A. : RDS(ON)=24m (Max.) @ VGS=-2.5V, ID

SMD Type Integrate Circuit IC 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator KMA1117(LMA1117) Features 1.4V maximum dropout at full load current Fast transient response Output current limiting Built-in thermal shutdown Good noise rejection 3-Terminal Adjustable or Fixed 1.5V, 1.8V, 1.