MJ15015 데이터시트 PDF ( Data sheet )

MJ15015 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor Silicon NPN high frequency, high power transistors in a metal envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak va

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A, D Complementary Silicon High-Power Transistors . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits su

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power swit

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000, D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc Monolithic Construction with Built

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000, 1001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900, 901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(s

NPN MJ1000 MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ