MJ16110 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ16110 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in half bridge and full bridge off line converters.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16110, D Designer's NPN Silicon Power Transistors SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBSOA Capabi

ON Semiconductort NPN Silicon Power Transistors SWITCHMODEt Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector Emitter Sustaining Voltage VCEO(sus) 400 V Coll

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000, D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc Monolithic Construction with Built

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000, 1001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900, 901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(s

NPN MJ1000 MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ