MJD127 데이터시트 PDF ( Data sheet )

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable op

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD127 TRANSISTOR (PNP) FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ

MJD127 MJD127 D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127 Complement to MJD122 1 D-PAK 1.Base 1 I-PAK 3.Emit

MJD112 Rev.E May.-2016 DATA SHEET 描述 , Descriptions TO-252 塑封封 NPN 半 三 管。Silicon NPN transistor in a TO-252 Plastic Package.  特征 , Features 直流 流增益高，E C 置阻尼二 管 性能 TIP112 等同。 High DC current gain, built-in a damper diode at E-C,electri

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features Lead Free Finish, RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) Case Material:Molded Plastic. U

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for