MJD253 데이터시트 PDF ( Data sheet )

isc Silicon PNP Power Transistor INCHANGE Semiconductor MJD253 DESCRIPTION ·High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust device performance and

MJD243 (NPN), MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK 3 for Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features http:, , onsemi.com 4.0 A, 100 V, 12.5 W POWER TRANSISTOR 4 4 Base 1 Collector 2 Em

MJD112 Rev.E May.-2016 DATA SHEET 描述 , Descriptions TO-252 塑封封 NPN 半 三 管。Silicon NPN transistor in a TO-252 Plastic Package.  特征 , Features 直流 流增益高，E C 置阻尼二 管 性能 TIP112 等同。 High DC current gain, built-in a damper diode at E-C,electri

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features Lead Free Finish, RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) Case Material:Molded Plastic. U

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for